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Research Papers

Characterization of Scandia Stabilized Zirconia Doped With Various Bi2O3 Additions as an Intermediate Temperature Solid Oxide Fuel Cell Electrolyte

[+] Author and Article Information
Bing Bai

 SOFEC, Inc., 14741 Yorktown Plaza Drive, Houston, TX 77040

Nigel M. Sammes

Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401

Alevtina L. Smirnova

Department of Chemical, Materials, and Biomolecular Engineering, University of Connecticut, Storrs, CT 06269

Geoff Tompsett

Department of Chemical Engineering, University of Massachusetts, Amherst, MA 01003

J. Fuel Cell Sci. Technol 7(2), 021002 (Dec 30, 2009) (7 pages) doi:10.1115/1.3117254 History: Received June 26, 2007; Revised June 02, 2008; Published December 30, 2009; Online December 30, 2009

Bi2O3 doped scandia stabilized zirconia systems have shown promise for use as electrolytes in intermediate temperature solid oxide fuel cells (IT-SOFC's). Sintering properties, crystal phase transformation, and electrical conductivity of the Bi2O3 doped Sc2O3ZrO2 systems were investigated. The effect of Bi2O3 doping from 0mol% to 2.0mol% and different sintering temperatures on the properties and performance of the electrolyte were examined. The presence of Bi2O3 aided the sintering process and better sintering for the doped system was achieved at lower temperatures. The cubic phase was successfully stabilized at room temperature with concentrations of 1mol% and 2mol%Bi2O3 sintered at 11001400°C. The achievement of a cubic structure depends on both the Bi2O3 concentration and the sintering temperature. Higher electrical conductivity was achieved with Bi2O3 doped Sc2O3ZrO2 systems than 10ScSZ below 600°C. A maximum conductivity of 1.68×102S/cm at 700°C was obtained for 2mol%Bi2O3 doped sample sintered at 1100°C.

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Figures

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Figure 1

A photograph of all samples sintered at 1000–1500°C

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Figure 2

XRD patterns of 10ScSZ sintered at 1000–1500°C (c: cubic; β: rhombohedral)

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Figure 3

XRD patterns of 10ScSZ doped with 1 mol %Bi2O3 sintered at 1000–1500°C (c: cubic; β: rhombohedral; m: monoclinic)

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Figure 4

XRD patterns of 10ScSZ doped with 2 mol %Bi2O3 sintered at 1000–1500°C (β: rhombohedral; m: monoclinic)

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Figure 5

XRD patterns of 10ScSZ doped with 0 mol %, 0.5 mol %, 1.0 mol %, and 2.0 mol %Bi2O3 sintered at 1100°C (a) and 1200°C (b), respectively (c: cubic; β: rhombohedral; m: monoclinic)

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Figure 6

Raman spectra of 10ScSZ, 1Bi1200, 1Bi1300, and 1Bi1400

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Figure 7

Raman spectra of 10ScSZ, 2Bi1200, 2Bi1300, and 2Bi1400

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Figure 8

Temperature dependence of electrical conductivity for 10ScSZ sintered at 1200°C, 1 mol %Bi2O3 doped 10ScSZ sintered at 1200°C, and 2 mol %Bi2O3 doped 10ScSZ sintered at 1100°C

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